PARAMETER

ION ETCHING

DEPOSITION

AL

TI

TIN

SOURCE

Arc source, titanium cathode

Magnetronargon

Magnetron, aluminum cathode

Magnetron, titanium cathode

Arc source, titanium cathode, nitrogen

CURRENT

50A

5A

5A

5 A

50 A

BIAS

600 V

800 V

100 V

100 V

100 V/10kHz

SUBSTRATE TEMPERATURE

ca. 200˚C

<200˚C

<200˚C

<200˚C

ca. 200˚C

PRESSURE

1.2 × 10⁻² mbar

5 × 10⁻³ mbar

5 × 10⁻³ mbar

5 × 10⁻³ mbar

1.2 × 10⁻² mbar